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| PRELIMINARY DATA SHEET SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of reliability. FEATURES High Linear Power and Gain Low Internal Modulation Distortion High Reliability Gold Metalization Emitter Ballasting 24 V Operation APPLICATION Digital Cellular : PCN/PCS etc. Digital Cordless : PHS etc. ORDERING INFORMATION Part Number NEL2012F03-24 Package Outline F03 PACKAGE DIMENSIONS (Unit: mm) 2.8 0.2 6.35 0.4 PIN CONNECTIONS 1. EMITTER 2. BASE 3. COLLECTOR 14.35 0.4 4.67 0.4 2 x 3.3 0.3 1 2 3 2.17 0.3 0.1+0.05 -0.02 18.9 0.3 14.2 0.3 6.35 0.4 The information in this document is subject to change without notice. Document No. P11768EJ1V0DS00 (1st edition) Date Published June 1997 N Printed in Japan 1.53 0.3 (c) 1996 NEL2012F03-24 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector to Emitter Voltage Collector Current Total Power Dissipation Thermal Resistance Junction Temperature Storage Temperature SYMBOL VCBO VCER VEBO VCEO IC PT Rth (j-c) Tj Tstg R = 10 : Specified Condition RATINGS 45 30 3 18 4 41.5 4.2 200 65 to +150 UNIT V V V V A W C/W C C ELECTRICAL CHARACTERISTICS (TA = 25 C) PARAMETERS Collector to Emitter Cutoff Current Collector to Emitter Voltage Collector to Emitter Voltage Collector to Base Voltage Emitter to Base Voltage DC Current Gain Output Capacitance SYMBOL ICES VCER VCEO VCEO VEBO hFE Cob Specified Condition VCE = 24 V IC = 8 mA, R = 10 : IC = 8 mA IC = 8 mA IC = 20 mA VCE = 5 V, IC = 0.8 A VCE = 24 V, freq = 1 MHz 30 18 45 3 30 85 22 85 4.4 100 12.6 150 pF MIN. TYP. MAX. 8 UNIT mA V V V V PERFORMANCE SPECIFICATIONS (TA = 25 C) CLASS AB OPERATION (Unless otherwise specified, freq = 1.97 GHz, VCC = 24 V, Iq = 75 mA) PARAMETERS Output Power Collector Efficiency Linear Gain 3rd Order Intermodulation SYMBOL P1dB Specified Condition MIN. 12 Pout = P1dB Pin = 0.5 W 40 TYP. 16 55 10.9 33 MAX. UNIT W % dB dBc KC GL IM3 'freq = 100 kHz, 12 W PEP CLASS A OPERATION (Unless otherwise specified, freq = 1.97 GHz, VCC = 20 V, Iq = 750 mA) PARAMETERS Output Power Collector Efficiency Linear Gain 3rd Order Intermodulation SYMBOL P1dB Specified Condition MIN. TYP. 5 Pout = P1dB Pin = 0.07 W 35 13.8 35 MAX. UNIT W % dB dBc KC GL IM3 'freq = 100 kHz, 2.5 W PEP 2 NEL2012F03-24 NEL2012F03-24 Typical Pout-Gain, Collector Efficiency (NC) and Collector Current (IC) Characteristics Class AB Gain [dB] 18 17 16 15 14 13 12 11 10 9 8 7 Nc 6 5 4 3 28 30 32 34 36 38 40 42 Ic Gain 90 80 70 60 50 40 30 20 10 0 Pout [dBm] 100 Nc [%] Ic [A] 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 .8 .6 .4 .2 0 freq = 1.970 GHz UCC = 24.0 V Icq = 0.075 A Class A Gain [dB] 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 24 26 28 30 32 34 36 38 Ic Nc 100 90 80 70 60 50 40 30 20 10 0 Pout [dBm] Gain Nc [%] Ic [A] 3 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1 .8 .6 .4 .2 0 freq = 1.970 GHz UCC = 20.0 V Icq = 0.750 A 3 NEL2012F03-24 NEL2012F03-24 Typical Pout (PEP) - Intermodulation (IM) Characteristics Class AB (f = 1.97 GHz, VCC = 24 V, Icq = 0.075A) IM -20 [dBc] IM3 -30 IM5 -40 IM7 -50 -60 20 30 POUT (PEP)[dBm] 40 Class A (f = 1.97 GHz, VCC = 20 V, Icq = 0.75A) IM -20 [dBc] -30 -40 IM5 -50 IM3 -60 20 30 POUT (PEP)[dBm] 40 IM7 4 NEL2012F03-24 NEL2012F03-24 Frequency Characteristics VCC = 24 v Icq = 0.075 A (Class AB) 45 44.5 44 43.5 43 12 11 10 P1dB 9 8 7 6 5 4 3 2 1.9 1.92 1.94 1.96 Freq [GHz] 1.98 2 GL P1dB [dBm] 42.5 42 41.5 41 40.5 40 GL [dB] 5 NEL2012F03-24 NEL2012F03-24 Zin/Zout 1.0 0.9 0.8 0.2 0.7 1.4 0.6 1.8 0.2 1.6 POS ITIV ER EA CT +A -- JX NCE ZO-- CO M P T EN ON 5 0. 0.4 0.6 2.0 ) ( ZIN 2 4 1 2 43 ZOUT 0.4 3 1 : 1.8 GHz 2 : 1.9 3 : 1.97 4 : 2.0 0.4 0.5 0.1 0.2 0.3 0.6 0.7 0.8 1.2 4.0 0.9 1.0 1.4 1.6 1.8 2.0 3.0 5.0 10 20 4.0 REACTANCE COMPONENT 50 0 0.1 0.4 0.6 T NEN PO 0 0.2 0. 8 6.0 1. M CO CE AN CT JX- A - --O RE -Z E IV ) ( 0.3 0. 5 0.6 0.7 0.8 0.9 Z0 = 50 : f [GHz] 1.80 1.90 1.97 2.00 Zin [:] 4.3 + j8.9 3.1 + j7.4 2.6 + j6.3 2.4 + j5.9 Zout [:] 2.6 + j2.2 2.4 + j1.3 2.2 + j0.6 2.2 + j0.4 1.0 1.2 Zout Zin 6 1.4 1.6 1.8 2.0 0.4 0.2 NE GA T 0. 4 20 R ( ----) ZO 50 10 3. 0 1. 0 0.8 0.6 0.6 1 0.1 1. 0 0. 8 0.2 0. 4 3. 0.8 1. 0 0 0.3 4.0 6.0 0.2 10 20 50 NEL2012F03-24 NEL2012F03-24 Class A S-Parameters VCC = 20 V, Icq = 0.75 A Freq (GHz) 1.70 1.71 1.72 1.73 1.74 1.75 1.76 1.77 1.78 1.79 1.80 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 1.89 1.90 1.91 1.92 1.93 1.94 1.95 1.96 1.97 1.98 1.99 2.00 MAG 0.846 0.844 0.842 0.841 0.840 0.839 0.837 0.837 0.836 0.835 0.834 0.835 0.834 0.833 0.833 0.835 0.833 0.833 0.835 0.836 0.837 0.839 0.842 0.845 0.846 0.848 0.851 0.854 0.857 0.860 0.863 S11 ANG 167.1 167.1 167.2 167.4 167.5 167.6 167.7 167.9 168.0 168.2 168.4 168.5 168.8 168.9 169.1 169.3 169.4 169.6 169.9 170.0 170.2 170.4 170.5 170.6 170.7 171.0 171.1 171.1 171.2 171.4 171.5 MAG 1.063 1.074 1.077 1.080 1.080 1.081 1.089 1.095 1.098 1.094 1.083 1.077 1.080 1.078 1.070 1.059 1.047 1.044 1.054 1.063 1.063 1.059 1.052 1.048 1.042 1.036 1.032 1.014 0.992 0.969 0.962 S21 ANG 47.2 46.1 44.5 43.3 42.2 41.1 40.1 38.3 36.7 35.3 34.1 32.7 31.5 30.3 28.8 27.4 26.7 25.9 25.1 23.9 22.3 20.2 18.6 17.4 15.7 14.1 12.1 9.9 8.5 7.6 6.7 MAG 0.034 0.034 0.033 0.032 0.033 0.032 0.031 0.030 0.030 0.029 0.029 0.028 0.028 0.028 0.027 0.026 0.025 0.025 0.024 0.023 0.021 0.021 0.019 0.019 0.017 0.016 0.015 0.014 0.013 0.012 0.011 S12 ANG 53.2 53.2 51.2 50.7 49.2 48.0 47.7 46.4 46.5 46.4 45.7 45.2 43.9 42.2 42.3 41.7 41.5 38.6 36.1 36.4 35.1 33.8 33.6 31.6 31.3 30.4 31.2 31.6 30.9 30.6 29.6 MAG 0.793 0.798 0.803 0.809 0.812 0.814 0.822 0.830 0.832 0.838 0.849 0.850 0.855 0.860 0.872 0.872 0.880 0.889 0.893 0.897 0.906 0.910 0.915 0.918 0.924 0.930 0.936 0.942 0.943 0.951 0.954 S22 ANG 178.0 178.2 177.7 177.8 177.7 178.0 177.7 177.5 177.6 177.9 178.2 178.0 178.1 178.4 178.5 178.9 178.9 178.9 179.1 179.5 179.9 180.0 179.9 179.3 179.2 179.0 178.4 178.2 177.6 177.3 177.1 7 NEL2012F03-24 NEL2012F03-24 Class AB S-Parameters VCC = 24 V, Icq = 0.075 A Freq (GHz) 1.70 1.71 1.72 1.73 1.74 1.75 1.76 1.77 1.78 1.79 1.80 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 1.89 1.90 1.91 1.92 1.93 1.94 1.95 1.96 1.97 1.98 1.99 2.00 MAG 0.916 0.915 0.912 0.911 0.910 0.909 0.906 0.905 0.903 0.901 0.899 0.897 0.896 0.893 0.890 0.890 0.886 0.883 0.882 0.879 0.877 0.876 0.874 0.873 0.871 0.869 0.867 0.867 0.865 0.864 0.863 S11 ANG 166.1 166.0 165.9 165.9 165.8 165.8 165.6 165.5 165.5 165.4 165.4 165.3 165.3 165.3 165.2 165.3 165.2 165.2 165.3 165.3 165.4 165.4 165.5 165.4 165.5 165.6 165.7 165.8 165.9 166.0 166.2 MAG 0.366 0.371 0.375 0.376 0.378 0.378 0.381 0.382 0.387 0.386 0.384 0.382 0.385 0.387 0.383 0.383 0.383 0.385 0.388 0.396 0.402 0.403 0.403 0.405 0.402 0.408 0.407 0.405 0.401 0.396 0.393 S21 ANG 28.1 27.5 26.1 24.9 24.3 23.7 23.2 21.8 20.4 19.4 18.4 17.4 16.4 15.8 14.3 13.3 12.5 12.5 11.9 10.6 9.5 7.3 6.0 4.6 3.2 1.7 0.8 2.8 4.3 5.2 6.3 MAG 0.019 0.019 0.019 0.018 0.018 0.018 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.016 0.016 0.015 0.016 0.015 0.014 0.014 0.013 0.013 0.012 0.012 0.011 0.011 0.009 0.009 0.008 0.007 S12 ANG 63.0 63.5 63.0 62.4 62.0 61.1 61.4 62.3 61.6 63.3 61.5 61.0 59.6 60.4 60.0 60.0 58.4 56.7 55.9 55.3 53.6 55.3 53.7 54.0 51.1 52.4 49.9 51.3 51.8 50.6 50.6 MAG 0.938 0.940 0.942 0.943 0.944 0.944 0.946 0.950 0.949 0.951 0.954 0.954 0.958 0.957 0.962 0.962 0.963 0.964 0.968 0.967 0.967 0.968 0.968 0.968 0.969 0.969 0.970 0.971 0.971 0.971 0.972 S22 ANG 175.4 175.8 175.9 176.1 176.3 176.6 176.8 177.0 177.2 177.5 177.8 177.9 178.1 178.5 178.6 178.9 178.9 179.2 179.5 179.6 180.0 179.8 179.6 179.2 179.1 178.9 178.6 178.3 178.0 177.7 177.5 8 NEL2012F03-24 Circuit Drawing 40 mm 40 mm Through Hole 1 1 mm x 4 8 15 22 1 5 9.5 1 1 5 1 2 8 5 1 8 22 1 6.6 2.3 1 1 50 mm 11 2 2 7.6 2.3 13 7.4 18.2 12.6 1 Output 3.3 2 4.2 1 8.9 0.5 0.5 1 1 121 6 18.2 6 Input 15 SUBSTRATE (TEFLON) DICLAD522T(R) THICKNESS = 0.79 mm DOUBLE SIDE 35 Pm Cu Hr = 2. 6 NEL2012F03-24 9 NEL2012F03-24 Components Layout VBB R3 R1 C2 R2 L1 This lead is placed near device flange. C4 VCC D1 C3 C4 C1 Input Output R1: 5.1 : R2: 50 : R3: 47 : L1: 5 mmI 10T Coil C1, C2, C3, C5: MURATA, 47 pF C4: 100 PF (50 V) Electrolytic Capacitor D1: V06C NEL2012F03-24 10 NEL2012F03-24 [MEMO] 11 NEL2012F03-24 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5 |
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